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2017 IEEE International Electron Devices Meeting (IEDM)

DOI: 10.1109/iedm.2017.8268380

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TSV-free FinFET-based Monolithic 3D+-IC with computing-in-memory SRAM cell for intelligent IoT devices

Proceedings article published in 2017 by Fu-Kuo Hsueh, Hsiao-Yun Chiu, Chang-Hong Shen, Jia-Min Shieh, Ying-Tsan Tang, Chih-Chao Yang, Hsiu-Chih Chen, Wen-Hsien Huang, Bo-Yuan Chen, Kun-Ming Chen, Guo-Wei Huang, Wei-Hao Chen, Kuo-Hsiang Hsu, Srivatsa Rangachar Srinivasa, Nicholas Jao and other authors.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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