Temperature dependency and reliability of through substrate via InAlN/GaN high electron mobility transistors as determined using low frequency noise measurement
Journal article published in 2016 by
Hsien-Chin Chiu,
Li-Yi Peng,
Hou-Yu Wang,
Hsiang-Chun Wang,
Hsuan-Ling Kao,
Feng-Tso Chien,
Jia-Ching Lin,
Kuo-Jen Chang,
Yi-Cheng Cheng
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