Published in
Elsevier, Journal of Alloys and Compounds, (767), p. 600-605
DOI: 10.1016/j.jallcom.2018.07.150
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Interface trap characterization of Al 2 O 3 /GaN vertical-type MOS capacitors on GaN substrate with surface treatments
Journal article published in 2018 by
Bing Ren,
Masatomo Sumiya,
Meiyong Liao 
,
Yasuo Koide,
Xinke Liu,
Yue Shen,
Liwen Sang
,
Yasuo Koide,
Xinke Liu,
Yue Shen,
Liwen Sang
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