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IOP Publishing, Chinese Physics Letters, 7(35), p. 078502

DOI: 10.1088/0256-307x/35/7/078502

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Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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