Published in
IOP Publishing, Nanotechnology, 27(22), p. 275702, 2011
DOI: 10.1088/0957-4484/22/27/275702
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Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors
Journal article published in 2011 by
Antonio Di Bartolomeo 
,
Filippo Giubileo,
Salvatore Santandrea,
Francesco Romeo,
Roberta Citro,
Thomas Schroeder,
Grzegorz Lupina
,
Filippo Giubileo,
Salvatore Santandrea,
Francesco Romeo,
Roberta Citro,
Thomas Schroeder,
Grzegorz Lupina
This paper was not found in any repository, but could be made available legally by the author.
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