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ACS Applied Electronic Materials, 5(1), p. 642-648, 2019

DOI: 10.1021/acsaelm.8b00102

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Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride

Journal article published in 2019 by Mengyuan Hua ORCID, Xiangbin Cai ORCID, Song Yang, Zhaofu Zhang ORCID, Zheyang Zheng, Ning Wang ORCID, Kevin J. Chen
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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