Published in
AIP Publishing, Applied Physics Letters, 5(109), p. 053506, 2016
DOI: 10.1063/1.4960523
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Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions
Journal article published in 2016 by
Z. B. Yan,
H. M. Yau,
Z. W. Li,
X. S. Gao,
J. Y. Dai,
J.-M. Liu 
This paper was not found in any repository, but could be made available legally by the author.
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